Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) Eyewear Lens Cleaning substrates with 10 degree towards (1 1 1)A.The grown films are characterized by optical microscopy, atomic force mi